? 2008 ixys corporation, all rights reserved ds99076a(05/08) v dss = 500v i d25 = 50a r ds(on) 85 m t rr 250 ns IXFR66N50Q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 500 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 33a, note 1 85 m hiperfet tm power mosfet q2-class symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c50a i dm t c = 25 c, pulse width limited by t jm 264 a i a t c = 25 c66a e as t c = 25 c4j dv/dt i s i dm , v dd v dss ,t j 150 c 20 v/ns p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.5..27 n/lb. weight 5g features ? double metal process for low gate resistance ? international standard package ? epoxy meet ul 94 v-0, flammability classification ? avalanche energy and current rated ? fast intrinsic rectifier advantages ? easy to mount ? space savings ? high power density n-channel enhancement mode avalanche rated, high dv/dt, low q g low intrinsic r g , low t rr g = gate d = drain s = source isolated tab isoplus247 (ixfr) e153432
ixys reserves the right to change limits, test conditions, and dimensions. IXFR66N50Q2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 33a, note 1 30 44 s c iss 9125 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1200 pf c rss 318 pf t d(on) 32 ns t r resistive switching times 16 ns t d(off) v gs = 10v, v ds = 0.5 ? v dss , i d = 33a 60 ns t f r g = 1 (external) 10 ns q g(on) 200 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 33a 47 nc q gd 98 nc r thjc 0.25 c /w r thcs 0.15 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 66 a i sm repetitive, pulse width limited by t jm 264 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1 c i rm 10 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v isoplus247 (ixfr) outline
? 2008 ixys corporation, all rights reserved IXFR66N50Q2 fig. 6. drain current vs. case te mpe rature 0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 2. extended output characteristics @ 25 c 0 20 40 60 80 100 120 140 160 02468101214161820 v d s - volts i d - amperes 7v v gs = 10v 8v 5v 6v fig. 3. output characteristics @ 125 c 0 10 20 30 40 50 60 70 02468101214 v d s - volts i d - amperes v gs = 10v 7v 6v 3.5v 4.5v 5v fig. 1. output characteristics @ 25 c 0 10 20 30 40 50 60 70 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 4.5v 5v 5.5v fig. 4. r ds(on ) normalized to 0.5 i d25 v alue vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 66a i d = 33 a v gs = 10v fig. 5. r ds(on) normalized to 0.5 i d25 value vs. i d 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 20 40 60 80 100 120 140 160 i d - amperes r d s ( o n ) - normalized t j = 125 c t j = 25 c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. IXFR66N50Q2 fig. 11. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mh z fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 250 v i d = 33a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v g s - volts i d - amperes t j = 125 c 25 c - 40 c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 i d - amperes g f s - siemens t j = - 40 c 25 c 125 c fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 160 180 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z ( t h ) j c - o c / w ixys ref: f_66n50q2 (94) 05-28-08-c
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